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Charge Carrier Generation by Exciton-Exciton Annihilation in Poly(Di-N-Hexylsilane)
Published online by Cambridge University Press: 25 February 2011
Abstract
We have studied charge carrier generation by photons in thin films of poly(di-n-hexylsilane) over the photon energy range 3.15 to 6 eV and find that it is nonlinear in light intensity to above 4.5 eV. We show that the generation mechanism is exciton-exciton annihilation.
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- Copyright © Materials Research Society 1992