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Characterizations of Boron Carbon Nitride and Boron Carbide Films Synthesized by PECVD

Published online by Cambridge University Press:  01 February 2011

Qingguo Wu ,
Mandyam Sriram ,
Jim Sims ,
Haiying Fu ,
Sesha Varadarajan ,
Tim Archer ,
Nathan J. Trujillo  and
Karen K. Gleason
Qingguo Wu
Affiliation:
[email protected], Novellys Systems, Inc, PECVD Business Unit, Tualatin, Oregon, United States
Mandyam Sriram
Affiliation:
[email protected], Novellys Systems, Inc, PECVD Business Unit, Tualatin, Oregon, United States
Jim Sims
Affiliation:
[email protected], Novellys Systems, Inc, PECVD Business Unit, Tualatin, Oregon, United States
Haiying Fu
Affiliation:
[email protected], Novellys Systems, Inc, PECVD Business Unit, Tualatin, Oregon, United States
Sesha Varadarajan
Affiliation:
[email protected], Novellys Systems, Inc, PECVD Business Unit, Tualatin, Oregon, United States
Tim Archer
Affiliation:
[email protected], Novellys Systems, Inc, PECVD Business Unit, Tualatin, Oregon, United States
Nathan J. Trujillo
Affiliation:
[email protected], MIT, Department of Chemical Engineering, Camridge, Massachusetts, United States
Karen K. Gleason
Affiliation:
[email protected], MIT, Department of Chemical Engineering, Camridge, Massachusetts, United States
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Abstract

Thin films of boron carbon nitride (BCN) and boron carbide (BC) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using two different reactant chemistries: (i) N,N’,N” – trimethylborazine (TMB); (ii) dilute diborane (5% in Ar) and hydrocarbon as precursor materials. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Nano-Indentor, Flexus stress instrument and x-ray photoelectron spectroscopy were used to study the deposited films. The BC films are much more stable than BCN films under high humidity (100%) environment. Both BCN and BC films are very stable under atmospheric conditions. A high compressive stress of -4.2 GPA was achieved by conventional PECVD, which show promising applications in high performance ultra large-scale integrated circuit (ULSI) devices.

Keywords

plasma-enhanced CVD (PECVD) (deposition)filmpolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-28
Copyright
Copyright © Materials Research Society 2009

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