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Characterization Of ZnGe(AsxP1-x)2 Crystals By Electrolyte Electroreflectance Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Mirko Angelov ,
Rüdiger Goldhahn ,
Olaf Nennewitz  and
Silke Schün
Mirko Angelov
Affiliation:
TU Ilmenau, Institut fuir Physik, PSF 0565, D-98684 Ilmenau, Germany
Rüdiger Goldhahn
Affiliation:
TU Ilmenau, Institut fuir Physik, PSF 0565, D-98684 Ilmenau, Germany
Olaf Nennewitz
Affiliation:
TU Ilmenau, Institut fuir Werkstoffe, PSF 0565, D-98684 Ilmenau, Germany
Silke Schün
Affiliation:
Hahn-Meitner-Institut Berlin, Bereich CS, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

The influence of the material composition on the optical properties of the quaternary compound semiconductor system ZnGe(AsxP1-x)2 was studied for the first time. The crystals have been synthesized by direct solidification from a stoichiometric melt. X-ray diffraction measurements revealed a chalcopyrite type lattice for the quaternary compound. Closer examination by energy dispersive X-ray microprobe analysis yielded the exact element concentrations for the As and P components. Then electrolyte electroreflectance (EER) spectroscopy was used to determine the energies of the fundamental optical transitions as a function of the composition x. The analysis shows an approximately linear increase of the direct band gap with decreasing As content.

Furthermore, the influence of the composition on the splitting and ordering of the three highest valence bands was investigated by polarization dependent EER measurements. The spectra for two samples with x = 0.42 and 0.77 allowed the determination of the spin orbit parameter Aso and the crystal field parameter Δ;cf by using the quasicubic model. The values were found close to calculated ones, obtained by the same model under the assumption of a precise linear dependence of the band gap on the composition x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 567
Copyright
Copyright © Materials Research Society 1996

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