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Characterization of Visible and Infrared (1.54 μm) Luminescence from Er-doped Porous Si

Published online by Cambridge University Press:  10 February 2011

R. White ,
X. Wu ,
U. Hömmerich ,
F. Namavar  and
A. M. Cremins-Costa
R. White
Affiliation:
Hampton University, Research Center for Optical Physics, Department of Physics Hampton, VA 23668
X. Wu
Affiliation:
Hampton University, Research Center for Optical Physics, Department of Physics Hampton, VA 23668
U. Hömmerich
Affiliation:
Hampton University, Research Center for Optical Physics, Department of Physics Hampton, VA 23668
F. Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01876
A. M. Cremins-Costa
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01876
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Abstract

Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er: PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 6507deg;C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er: PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er3+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15–375K) of Er3+ PL intensity and lifetime are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 137
Copyright
Copyright © Materials Research Society 1996

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