Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-23T08:51:13.001Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  13 March 2014

G. Medina ,
P.A. Stampe ,
R.J. Kennedy ,
R.J. Reeves ,
G.T. Dang ,
A. Hyland ,
M.W. Allen ,
M.J. Wahila ,
L.F.J. Piper  and
S. M. Durbin
G. Medina
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260, USA
P.A. Stampe
Affiliation:
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
R.J. Kennedy
Affiliation:
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
R.J. Reeves
Affiliation:
Department of Physics, University of Canterbury, Christchurch 8140, New Zealand
G.T. Dang
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
A. Hyland
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
M.W. Allen
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
M.J. Wahila
Affiliation:
Department of Physics, Binghamton University, Binghamton, NY 13902, USA
L.F.J. Piper
Affiliation:
Department of Physics, Binghamton University, Binghamton, NY 13902, USA
S. M. Durbin
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260, USA Department of Physics, University at Buffalo, Buffalo, NY 14260, USA Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, MI 49008, USA
Get access

Abstract

We describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

Keywords

oxidethin filmmolecular beam epitaxy (MBE)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 13 - 18
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Batzill, M., Diebold, U., Prog. Surf. Science 79 (2005) 47.CrossRefGoogle Scholar
Nagata, T., Bierwagen, O., White, M.E., Tsai, M.Y., Yamashita, Y., Yoshikawa, H., Ohashi, N., Kobayashi, K., Chikyow, T., Speck, J.S., Appl. Phys. Lett. 98 (2011) 232107.CrossRefGoogle Scholar
Cavicchi, R.E., Semancik, S., Antonik, M.D., Lad, R.J., Appl. Phys. Lett. 61 (1992) 1921.CrossRefGoogle Scholar
Vispute, R.D., Godbole, V.P., Chaudhari, S.M., Kanetkar, S.M., Ogale, S.B., J. Mater. Res. 3 (1988) 1180.CrossRefGoogle Scholar
Ghoshtagore, R.N., J. Electrochem. Soc. 125 (1978) 110.CrossRefGoogle Scholar
Ogo, Y., Hiramatsu, H., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M., Hosono, H., Appl. Phys. Lett. 93 (2008) 032113.CrossRefGoogle Scholar
Batzill, M., Burst, J.M., Diebold, U., Thin Solid Films 484 (2005) 132.CrossRefGoogle Scholar
White, M.E., Tsai, M.Y., Wu, F., Speck, J.S., J. Vac. Sci. Tech. A 26 (2008) 1300.CrossRefGoogle Scholar
White, M.E., Molecular Beam Epitaxy and Characterization of Stannic Oxide, Doctoral Thesis, University of California, Santa Barbara (2010).Google Scholar
Lee, W.C.T., Doctoral Thesis, University of Canterbury (2008).Google Scholar
Ko, H.-J., Yao, T., Chen, Y., Hong, S.-K., J. Appl. Phys. 92 (2002) 4354.CrossRefGoogle Scholar
Quackenbush, N.F., Allen, J.P., Scanlon, D.O., Sallis, S., Hewlett, J.A., Nandur, A.S., Chen, B., Smith, K.E., Weiland, C., Fischer, D.A., Woicik, J.C., White, B.E., Watson, G.W., Piper, L.F.J., Chem. Mater. 25 (2013) 3114.CrossRefGoogle Scholar
Allen, M.W., Durbin, S.M., Metson, J.B., Appl. Phys. Lett. 91 (2007) 053512.CrossRefGoogle Scholar
Guo, W., Fu, L., Zhang, Y., Zhang, K., Liang, L.Y., Liu, Z.M., Cao, H.T., and Pan, X.Q., Appl. Phys. Lett. 96 (2010) 042113.CrossRefGoogle Scholar