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Characterization of Thermally Evaporated Ag-Ge-S Thin Films

Published online by Cambridge University Press:  01 February 2011

Fei Wang ,
William Porter Dunn ,
Mukul Jain ,
Carter De Leo ,
Nicholas Vicker ,
Richard Savage ,
Xiaomin Jin ,
Sergey Mamedov  and
Punit Boolchand
Fei Wang
Affiliation:
[email protected], California State University at Long Beach, Electrical Engineering, 1250 Bellflower Blvd., Long Beach, CA, 90840, United States
William Porter Dunn
Affiliation:
[email protected], California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Mukul Jain
Affiliation:
[email protected], California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Carter De Leo
Affiliation:
[email protected], California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Nicholas Vicker
Affiliation:
[email protected], California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Richard Savage
Affiliation:
[email protected], California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Xiaomin Jin
Affiliation:
[email protected], California Polytechnic State University, San Luis Obispo, CA, 93407, United States
Sergey Mamedov
Affiliation:
[email protected], Horiba Jobin Yvon Inc, Edison, NJ, 08820, United States
Punit Boolchand
Affiliation:
[email protected], University of Cincinnati, Cincinnati, OH, 45221, United States
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Abstract

Thin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.

Keywords

Raman spectroscopyAgthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G03-21
Copyright
Copyright © Materials Research Society 2008

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References

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