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Characterization of Thermal Oxides of Laser Annealed Polysilicon

Published online by Cambridge University Press:  15 February 2011

Rajiv R. Shah ,
Robert Mays JR.  and
D. Lloyd Crosthwait
Rajiv R. Shah
Affiliation:
Texas Instruments Incorporated, Semiconductor Research and Development Laboratories, P.O. Box 225012, Dallas, Texas 75265
Robert Mays JR.
Affiliation:
Texas Instruments Incorporated, Semiconductor Research and Development Laboratories, P.O. Box 225012, Dallas, Texas 75265
D. Lloyd Crosthwait
Affiliation:
Texas Instruments Incorporated, Semiconductor Research and Development Laboratories, P.O. Box 225012, Dallas, Texas 75265
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Abstract

We report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 597
Copyright
Copyright © Materials Research Society 1982

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References

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