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Characterization of the Substrate/Film Interface in GaN Films by Image Depth Profiling Secondary Ion Mass Spectrometry (Sims)

Published online by Cambridge University Press:  10 February 2011

Salman Mitha ,
Robert Clark-Phelps ,
Jon W. Erickson ,
Y. Gao ,
Wook Kim  and
Hadis Morkoç
Salman Mitha
Affiliation:
Charles Evans Associates, Redwood City, CA 94063, USA
Robert Clark-Phelps
Affiliation:
Charles Evans Associates, Redwood City, CA 94063, USA
Jon W. Erickson
Affiliation:
Charles Evans Associates, Redwood City, CA 94063, USA
Y. Gao
Affiliation:
Charles Evans Associates, Redwood City, CA 94063, USA
Wook Kim
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield Avenue, Urbana, IL 61801
Hadis Morkoç
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield Avenue, Urbana, IL 61801
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Extract

Epitaxial GaN films are normally grown on substrates, such as sapphire, that are not an exact lattice match for GaN. Thus during the early stages of film growth, defects may be introduced in the film. These defects can lead to islanding and form voids or other defects just above the interface. These defects produce nonuniformity in the films and affect the quality of the final film. SIMS depth profiling is a widely used to characterize GaN films. The normal SIMS depth profiles provide chemical and depth information but do not provide any lateral information. We show that image depth profiling with SIMS is a technique that can be used to identify the defects and also chemically identify other interface features with lateral dimensions down to 1 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 183
Copyright
Copyright © Materials Research Society 1997

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References

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