Hostname: page-component-669899f699-b58lm Total loading time: 0 Render date: 2025-04-25T17:36:55.593Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of the Structure and Polarity of Twin Boundaries in GaP

Published online by Cambridge University Press:  10 February 2011

Dov Cohent ,
D.L. Medlin  and
C. Barry Carter
Dov Cohent
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, MN 55455 Sandia National Laboratories, Livermore, CA 94551
D.L. Medlin
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, MN 55455
Get access

Abstract

The structure of planar defects in GaP films grown by MBE on Si (110) was investigated by transmission electron microscopy. Growth of GaP films on the (110) surface produced numerous microtwins which formed both first and second order twin boundaries. Using high-resolution transmission electron microscopy, the atomic structure of Σ=3 and Σ=9 twin boundaries were studied. Both the Σ=3 and Σ=9 interfaces were observed to facet along specific crystallographic planes. Geometric models of the Σ=9 {221} twin boundary accounting for different polar bonding configurations were proposed and compared with experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 613
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Grovenor, C. R.M., J. Phys. C. 18, 4079 (1985)Google Scholar
2. Krivanek, O.L., Isoda, S., Koyashi, K., Phil. Mag, 36, 931 (1977)Google Scholar
3. Papon, A.M., Petit, M, Backmann, J.J., Phil. Mag, 49, 573 (1984)Google Scholar
4. DeCooman, B.C., Cho, N.-H., Carter, C.B., Elgat, Z., Ultramicroscopy, 18, 305 (1985)Google Scholar
5. Holt, D., J. Phys. Chem. Solids, 25, 1385 (1964).Google Scholar
6. Lee, B.-T., Lee, J.Y., Bourret, E.D., Appl. Phys. Let., 57, 346 (1990)Google Scholar
7. Shiojiri, K.M. et al. , Phil. Mag.A, 46, 495 (1982)Google Scholar
8. Williams, A.C., Wright, J.O., Phil. Mag.A, 55, 99 (1987)Google Scholar
9. Cho, N.-H, McKeman, S., Wagner, D.K., Carter, C. B., J. D. Physique, C 5, 245 (1988)Google Scholar
10. Cohen, D., McKernan, S., Carter, C. B., Micros. Microanal., 3, 491 (1997)Google Scholar
11. Cohen, D., Carter, C.B., Mat. Res. Soc. Sym., 442, 503 (1996)Google Scholar
12. Kohn, J.R., Am. Miner., 43, 263 (1958)Google Scholar
13. Garg, A., Clark, W.A.T., Hirth, J.P., Phil. Mag. A, 59, 479 (1989)Google Scholar
14. Bollmann, W., Crystal Structures and Crystal Interfaces, Springer-Verlag, New York (1970)Google Scholar
15. Kujabji, M.E. et.al., Revue Phys. Appl., 22, 569 (1987)Google Scholar
16. Hornstra, J., Physica, 25, 409 (1959)Google Scholar
17. Holt, D., J. Phys. Chem. Solids, 30, 1297 (1969)Google Scholar
18. Stadelmann, P., Ultramicroscopy, 21, 131 (1981)Google Scholar
19. Glaisher, R. W., Spargo, A.E.C., Smith, D.J., Ultramicroscopy, 27, 131 (1989)Google Scholar