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Characterization of the Piezoelectric Response of Aluminum Nitride Grown by dc Magnetron Sputtering for Applications in Thin-Film Resonators

Published online by Cambridge University Press:  15 February 2011

Rajan S. Naik
Affiliation:
Department of Materials Science and Engineering
Joseph J. Lutsky
Affiliation:
Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology, Cambridge MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology, Cambridge MA 02139
Charles G. Sodini
Affiliation:
Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology, Cambridge MA 02139
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Abstract

Aluminum nitride is a promising material for use in thin-film bulk acoustic wave resonators for applications in RF bandpass filters. This paper discusses the requirements needed for a dc magnetron sputtering system to grow piezoelectrically active films with x-ray diffraction rocking curves of 3.3° on silicon substrates, 5° on aluminum substrates and oxygen concentrations of l at.%. For applications in integrated resonators, a materials characterization is insufficient in predicting the subsequent device performance. A simple acoustic device structure which allows a quick measurement of the device performance is used to extract maximum effective coupling coefficients keff2 of 0.009% at 3.4GHz and 0.002% at 2.4GHz for two different films with rocking curves of 5.7° and 9.0° respectively. This parameter extraction technique may be used to make relative comparisons between films grown under different deposition conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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