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Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTe

Published online by Cambridge University Press:  10 February 2011

C. R. Eddy Jr. ,
D. Leonhardt ,
V. A. Shamamian ,
R. T. Holm ,
O. J. Glembocki ,
J. R. Meyer ,
C. A. Hoffman  and
J. E. Butler
C. R. Eddy Jr.
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375, e-mail: [email protected]
D. Leonhardt
Affiliation:
NRC Postdoctoral Fellow, U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
V. A. Shamamian
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
R. T. Holm
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
O. J. Glembocki
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
J. R. Meyer
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
C. A. Hoffman
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
J. E. Butler
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC 20375
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Abstract

High density plasma etching of Hg1−xCdxTe in CH4/H2/Ar chemistry is examined using mass spectroscopy with careful surface temperature monitoring. The dominant etch products are monitored as a function of surface temperature (15–200°C), ion energy (20–200 eV), total pressure (0.5–5 mTorr), microwave power (200–400 W), and flow fraction of methane in the etch gas mixture (0–30%). In addition, observations are made regarding the regions of parameter space which are best suited to anisotropie, low damage etch processing. These observations are compared with previous results in the form of scanning electron micrographs of etched features for anisotropy evaluation and Hall effect measurements for residual damage. Insights to the overall etch mechanism are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 275
Copyright
Copyright © Materials Research Society 1997

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References

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