Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T08:04:42.359Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Sputter Deposited Al-Nitride And Al-Oxide by X-Ray Photoelectron Loss Spectroscopy

Published online by Cambridge University Press:  28 February 2011

Charlene J.G. Kubiak ,
Carolyn Rubin Aita ,
Ngoc C. Tran  and
Tery L. Barr
Charlene J.G. Kubiak
Affiliation:
Materials Department and the Laboratory for Surface StudiesUniversity of Wisconsin-Milwaukee, P. O. Box 784, Milwaukee, WI 53201
Carolyn Rubin Aita
Affiliation:
Materials Department and the Laboratory for Surface StudiesUniversity of Wisconsin-Milwaukee, P. O. Box 784, Milwaukee, WI 53201
Ngoc C. Tran
Affiliation:
Materials Science CenterUniversity of Wisconsin-Madison, Madison, WI 53706
Tery L. Barr
Affiliation:
Materials Department and the Laboratory for Surface StudiesUniversity of Wisconsin-Milwaukee, P. O. Box 784, Milwaukee, WI 53201
Get access

Abstract

The results of an x-ray photoelectron loss spectroscopy (XPLS) study of several wide band gap aluminum compounds are presented here. XPLS is a new application of x-ray photoelectron spectroscopy involving the determination of the energy separation, ΔE, between a particular core photoelectron peak and its principal loss peak. The materials investigated here are sputter deposited thin film Al-nitride and oxide, and bulk single crystal α-alumina. It is not possible to distinguish between these materials on the basis of the chemical shift in the binding energy of the A12p and A12s photoelectrons (Siegbahn shift). The results show that XPLS can be used to distinguish between these materials. ΔE in Al-oxides and nitride differs by several eV and is independent of sample charging. Comparison with ΔE calculated using a free electron gas model is made and related to the plasmon nature of ΔE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 379
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kubiak, C. J. G., Aita, C. R., Hickernell, F. S., and Joseph, S. J., Proc. Mater. Res. Soc. 47, 75 (1985).CrossRefGoogle Scholar
2. Kovacich, J. A., Kasperkiewicz, J., Lichtman, D., and Aita, C. R., J. Appl. Phys. 55, 2935 (1984).CrossRefGoogle Scholar
3. Gadzuk, J. W., J. Electron Spec. Rel. Phenom. 11, 335 (1977).Google Scholar
4. Barr, T. L., Appl. Sur. Sci. 10, 1 (1983).Google Scholar
5. Barr, T. L., Kramer, B., Shah, S. I., Ray, M., and Greene, J. E., Proc. Mat. Res. Soc. 47, 205 (1985).Google Scholar
6. Pines, D. and Bohm, D., Phys. Rev. 85, 338 (1952).Google Scholar
7. Pines, D., Rev. Mod. Phys. 28, 184 (1956).CrossRefGoogle Scholar
8. Norieres, P. and Pines, D., Phys. Rev. 109, 741 (1958).CrossRefGoogle Scholar
9. Welkie, D. G. and Lagally, M. G., J. Vac. Sci. Technol 16, 784 (1979).Google Scholar
10. Briggs, D. and Seah, M. P., Practical Surface Analysis by Auger and Photoelectron Spectroscopy (Wiley, New York, 1983) pp. 511–514.Google Scholar
11. Wells, A. F., Structural Inorganic Chemistry (Calredon, London, 1950) pp. 379–386.Google Scholar
12. Ibid. pp. 49, 462.Google Scholar
13. Thornton, J. A. and Chin, J., Ceramic Bull. 56, 504 (1977).Google Scholar
14. Tews, W. and Grundler, R., phys. stat. sol. (b), 109, 255 (1982).Google Scholar
15. Tews, W. and Zimmermann, R., phys. stat. sol. (b) 110, 479 (1982).Google Scholar
16. Frieser, R. G., J. Electrochem. Soc. 113, 357 (1966).Google Scholar
17. Klemperer, O. and Shepherd, J. P. G., Adv. Phys. 12, 355 (1963).Google Scholar
18. Aita, C. R., unpublished. (6 valence electrons/AIN molecule and 6 molecules/unit cell are assumed.)Google Scholar