Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:17:17.133Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Silicon thin Film Deposited by E-Beam Evaporator for Flexible Display

Published online by Cambridge University Press:  01 February 2011

In-Hyuk Song ,
Sang-Myeon Han ,
Jung-Hyun Park  and
Min-Koo Han
In-Hyuk Song
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Sang-Myeon Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Jung-Hyun Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Get access

Abstract

The structure and crystal growth of the silicon thin film deposited by e-beam evaporator have been studied with use of scanning electron microscopy (SEM), x-ray diffraction and transmission electron microscopy (TEM). The silicon thin film is deposited at room temperature for flexible display. It is found that the silicon film deposited by e-beam evaporator has polysilicon structure by scanning electron microscopy (SEM). SEM image also shows that grain size of the silicon film is about 50nm. X-ray diffraction of the silicon thin film represents that the orientation of the silicon film is (201). We have also investigated the structure and the crystal growth of the silicon film after the silicon film is irradiated by XeCl excimer laser with various energy densities. Transmission electron microscopy shows that the irradiated silicon thin film has low intra-grain defects and sharp grain boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A5.8
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lengsfeld, P., Nickel, N. H., and Fuhs, W., Appl. Phys. Lett. 76, No 13, pp.1680–1682 (2000).10.1063/1.126134Google Scholar
[2] Mei, P., Boyce, J. B., Hack, M., Lujan, R., Ready, S. E., Fork, D. K., Jhonson, R. I., Anderson, G. B., J. Appl. Phys, 76 (5), pp.3194–3199, 1944 10.1063/1.357505Google Scholar
[3] Gosain, D. P., Westwater, J., Usui, S., Proceeding of AMLCD 97, Tokyo, Japan, pp.51–54, 1997 Google Scholar
[4] Sundgren, J-E, Hentzell, H. T. G., J. Vac. Sci. Techol. A, 4(5), pp. 2259–2279, September, 1986 10.1116/1.574062Google Scholar
[5] Jaworske, D. A., Thin Solid Films 332, pp.30–33, 1998 10.1016/S0040-6090(98)01043-8Google Scholar
[6] Zhao, Z.X., Cui, R.Q., Meng, F.Y., Zhou, Z.B., Yu, H.C. and Sun, T.T., Solar Energy Materials and Solar Cells, 86 (1), pp.135–144, February, 2005 10.1016/j.solmat.2004.05.025Google Scholar
[7] Xia, H., He, Y. L., Wang, L. C., Zhang, M., Liu, X. N., Zhang, X. K., Feng, D., Jackson, H. E., J. Appl. Phys, 78, pp. 6705–6708, 1995 10.1063/1.360494Google Scholar
]8] He, Y. L., Yin, C. Z., Cheng, G. X., Wang, L. C., Liu, X. N., Hu, G. Y., J. Appl. Phys. 75 (2), pp. 797–803, 1994 10.1063/1.356432Google Scholar
[9] Im, James S., Kim, H. J., Appl. Phys. Lett. 63 (14), pp1969–1971, 1993 10.1063/1.110617Google Scholar