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Characterization of SiGeC Using Pt(SiGeC) Silicide Schottky Contacts

Published online by Cambridge University Press:  10 February 2011

Jeff J. Peterson ,
Charles E. Hunt ,
McDonald Robinson  and
Robin SCott
Jeff J. Peterson
Affiliation:
1 Dept. of Electrical and Computer Engineering, Univ. of California, Davis, CA 95616, USA
Charles E. Hunt
Affiliation:
1 Dept. of Electrical and Computer Engineering, Univ. of California, Davis, CA 95616, USA
McDonald Robinson
Affiliation:
Lawrence Semiconductor Research Laboratory Inc., Tempe, AZ 85282, USA
Robin SCott
Affiliation:
Lawrence Semiconductor Research Laboratory Inc., Tempe, AZ 85282, USA
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Abstract

Material and electrical characterization of n-type and p-type Si1-x-yGex Cy epitaxial layers on Si(100) was performed using silicided platinum Schottky contacts. XRD studies show Pt silcidation of SiGeC proceeds from non-reacted Pt to Pt2(SiGeC) and completes with the Pt(SiGeC) phase similar to Pt/Si silicides, but Pt silicide reactions with SiGeC are shown to require higher temperatures than Pt reactions with Si. Electrical characterization of Pt(SiGeC) contacts to n-type Sil1-x-yGexCx/Si shows rectifying behavior with constant barrier heights of 0.67eV independent of composition, indicating Fermi level pinning relative to the SiGeC conduction band is occurring. Pt(SiGeC) contacts to p-type Si1-x-yGexCy/Si are also rectifying with barrier heights that track the variation of the SiGeC energy bandgap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 117
Copyright
Copyright © Materials Research Society 1998

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