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Characterization of SiC nanowires grown by APCVD using single precursors

Published online by Cambridge University Press:  01 February 2011

Dae-Ho Rho ,
Jae-Soo Kim ,
Dong-Jin Byun ,
Jae-Woong Yang ,
Jae-Hoon Lee  and
Na-Ri Kim
Dae-Ho Rho
Affiliation:
Dept. of Materials Science, Korea University, 1, 5-ka Anam-dong, Seongbuk-gu, Seoul, 136–701, Korea
Jae-Soo Kim
Affiliation:
Metal Processing Research Center, Korea Institute of Science and Technology, 39–1 Hawolgok-dong, Seongbuk-gu, Seoul, 136–791, Korea
Dong-Jin Byun
Affiliation:
Dept. of Materials Science, Korea University, 1, 5-ka Anam-dong, Seongbuk-gu, Seoul, 136–701, Korea
Jae-Woong Yang
Affiliation:
Dept. of Advance Materials, Daejin University, 11–1 Sandan-ri, Pochongun, Kyonggi-do, 487–711, Korea
Jae-Hoon Lee
Affiliation:
Advanced Materials Division, Korea Institute of Industrial Technology, 994–32, Dongchun-Dong, Yeonsu-Gu, Incheon 406–130, Korea.
Na-Ri Kim
Affiliation:
Dept. of Materials Science, Korea University, 1, 5-ka Anam-dong, Seongbuk-gu, Seoul, 136–701, Korea
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Abstract

SiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10∼60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.16
Copyright
Copyright © Materials Research Society 2005

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References

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