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Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films

Published online by Cambridge University Press:  01 February 2011

Tomas Wagner ,
Jan Gutwirth ,
Jiri Orava ,
Jan Prikryl ,
Petr Bezdicka ,
Miroslav Bartos ,
Milan Vlcek  and
Miloslav Frumar
Tomas Wagner
Affiliation:
[email protected], University of Pardubice, General and Inorganic Chemistry, Legion's sq.565, Parduboce, 53210, Czech Republic, +420466037144, +420466037311
Jan Gutwirth
Affiliation:
[email protected], University of Pardubice, Faculty of Chemical Technology, General and Inorganic Chemistry and Research Centre, Legion's sq. 565, Pardubice, 53210, Czech Republic
Jiri Orava
Affiliation:
[email protected], University of Pardubice, Faculty of Chemical Technology, General and Inorganic Chemistry and Research Centre, Legion's sq. 565, Pardubice, 53210, Czech Republic
Jan Prikryl
Affiliation:
[email protected], University of Pardubice, Faculty of Chemical Technology, General and Inorganic Chemistry and Research Centre, Legion's sq. 565, Pardubice, 53210, Czech Republic
Petr Bezdicka
Affiliation:
[email protected], Institute of Inorganic Chemistry, AS CR, v.v.i., Husinec - Rez u Prahy, 25068, Czech Republic
Miroslav Bartos
Affiliation:
[email protected], University of Pardubice, Faculty of Chemical Technology, General and Inorganic Chemistry and Research Centre, Legion's sq. 565, Pardubice, 53210, Czech Republic
Milan Vlcek
Affiliation:
[email protected], Joint Laboratory of Solid State Chemistry, IMC ASCR, v.v.i. and University of Pardubice, Studentska st. 84, Pardubice, 53210, Czech Republic
Miloslav Frumar
Affiliation:
[email protected], University of Pardubice, Faculty of Chemical Technology, General and Inorganic Chemistry and Research Centre, Legion's sq. 565, Pardubice, 53210, Czech Republic
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Abstract

RF magnetron sputtering technique has been used to deposit new films potentially applicable in phase-change memories. Ge2Sb2Te5 seems to be promising material, but it is not clear whether it is optimum composition for such application. We studied different deposition condition and deposition of films doped by excess of Sb and doped also by Se, which equally replaces Te atoms compare to Ge2Sb2Te5. The sputtering target composition for our study was Ge2Sb2.3Te4Se1. Sputtered films contained less Se than target. Deposited films were characterized as-deposited and after thermal treatment in temperature range 30 − 300 °C.

Keywords

sputteringcrystallineelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G05-07
Copyright
Copyright © Materials Research Society 2008

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References

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