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Characterization of Pseudomorphic Hemt Structures by Modulation Spectroscopy

Published online by Cambridge University Press:  22 February 2011

A. Dimoulas ,
K. Zekentes  and
M. Androulidaki
A. Dimoulas
Affiliation:
University of Groningen, Department of Applied Physics, Nijenborgh 4, 9747 AG Groningen, The Netherlands
K. Zekentes
Affiliation:
Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, Heraklion 711 10, Crete, Greece
M. Androulidaki
Affiliation:
Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, Heraklion 711 10, Crete, Greece
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Abstract

Phototransmittance has been used to investigate several pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures, with different values of the electron density ns. A lineshape analysis of the ground state transition made it possible to estimate ns, at room temperature. A signal from the Fermi-edge singularity (a manybody effect), was observed at low temperatures and the dependence of its intensity on temperature and electron density was examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 205
Copyright
Copyright © Materials Research Society 1994

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