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Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them

Published online by Cambridge University Press:  11 February 2011

Balaji Raghothamachar ,
Jie Bai ,
William M. Vetter ,
Perena Gouma ,
Michael Dudley ,
Marina Mynbaeva ,
Matthew T. Smith  and
Stephen E. Saddow
Balaji Raghothamachar
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Jie Bai
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
William M. Vetter
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Perena Gouma
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Michael Dudley
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Marina Mynbaeva
Affiliation:
A. F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
Matthew T. Smith
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620, U.S.A.
Stephen E. Saddow
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620, U.S.A.
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Abstract

Porous 6H-SiC and 4H-SiC wafers formed by anodization have been characterized in this study prior to and following the CVD deposition of SiC epitaxial layers, using a combination of synchrotron white beam x-ray topography (SWBXT), SEM, TEM and optical microscopy. Under the high temperatures employed during epitaxial growth, a significant change in pore morphology occurs. While no evidence of reduced screw dislocation density in the epilayers is obtained, a small tilt of the epilayers with respect to the porous substrate observed on x-ray topographs could play a role in limiting penetration of defects from the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.11
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Mynbaeva, M., Savkina, N., Zubrilov, A., Seredova, N., Scheglov, M., Titkov, A., Tregubova, A., Lebedev, A., Kryzhanovski, A., Kotousova, I., Dmitriev, V., in Substrate Engineering--Paving the Way to Epitaxy, Mater. Res. Soc. Proc. 587, 8.6.1 (2000).Google Scholar
2. Mynbaeva, M., Savkina, N., Tregubova, A., Scheglov, M., Lebedev, A., Zubrilov, A., Titkov, A., Kryganovski, A., Mynbaev, K., Seredova, N., Tsvetkov, D., Stepanov, S., Cherenkov, A., Kotousova, I., Dimitriev, V. A., in Silicon Carbide and Related Materials, Part 1, Mater. Sci. Forum 338–342, 225–228 (2000).Google Scholar
3. Shor, J. S., Grimberg, I., Weiss, B-Z., Kurtz, A. D., Appl. Phys. Lett. 62, 2836 (1993).Google Scholar
4. Harris, C. I., Konstantinov, A. O., Hallin, C., Janzen, E., Appl. Phys. Lett. 66, 1501 (1995).Google Scholar
5. Matsumoto, T., Takahashi, J., Tamaki, T., Futagi, T., Mimura, H., Appl. Phys. Lett. 64, 226 (1994).Google Scholar
6. Mybaeva, M., Saddow, S. E., Melnychuk, G., Nikitina, I., Scheglov, M., Sitnikova, A., Kuznetsov, N., Mynbaev, K., Dmitriev, V., Appl. Phys. Lett. 78, 117 (2001)Google Scholar
7. Smith, M. T., Fawcett, T., Wolan, J. T., and Saddow, S. E., “Design and Development of a SiC Chemical Vapor Deposition Reactor,” AIChE 2002 Annual Meeting, Indianapolis, IN, Nov. 3–8, 2002.Google Scholar
8. Sagar, A., Lee, C. D., Feenstra, R. M., Inoki, C. K., Kuan, T. S., J. Appl. Phys. 92, 4070 (2002).Google Scholar
9. Saddow, S. E., Melnychuk, G., Mynbaeva, M., Nikitina, I., Vetter, W. M., Jin, L., Dudley, M., Shamsuzzoha, M., Dmitriev, V., Wood, C. E. C., in Silicon Carbide: Materials, Processing and Devices, Mater. Res. Soc. Proc. 640, H2.7.1 (2001).Google Scholar
10. Konstantinov, A. O., Harris, C. I., and Yanzen, E., Appl. Phys. Lett. 65, 2699 (1994).Google Scholar
11. Zangooie, S., Arwin, H., Phys. Stat. Sol. (a) 182, 213 (2000),Google Scholar
12. Zangooie, S., Persson, P. O. A., Hilfiker, J. N., Hultman, L., Arwin, H., J. Appl. Phys. 87, 8497 (2000).Google Scholar
13. Zangooie, S., Persson, P. O. A., Hilfiker, J. N., Hultman, L., Arwin, H., Wahab, Q., in Silicon Carbide and Related Materials, Part 1 &2, Mater. Sci. Forum. 338–3, 537 (2000).Google Scholar
14. Zangooie, S., Arwin, H., J. Electrochem. Soc. 148, G297 (2001).Google Scholar
15. Zangooie, S., Woollam, J. A., Arwin, H., J. Mater. Res. 15, 1860 (2000).Google Scholar