Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T12:00:03.227Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

Published online by Cambridge University Press:  10 February 2011

C. H. Lin ,
H. C. Kuo ,
G. E. Stillman  and
Haydn Chen
C. H. Lin
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign
H. C. Kuo
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
G. E. Stillman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
Haydn Chen
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign
Get access

Abstract

Highly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 679
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Giniewicz, J. R., Bhalla, A. S. and Cross, L. E., Ferroeletrics Lett. 12, 35 (1990)Google Scholar
2. Giniewicz, J. R., Bhalla, A. S. and Cross, L. E., Ferroeletrics 118, 35 (1991)Google Scholar
3. Giniewicz, J. R., Bhalla, A. S. and Cross, L. E., Ferroeletrics Lett. 14, 21 (1992)Google Scholar
4. Reaney, I. M., Barber, D. J. and Watton, R., J. Mat. Sci. 3, 51 (1992)Google Scholar
5. Liu, D. and Payne, D., Proceedings of International Symposium on Applications of Ferroelectrics 1995, 435 (1995)Google Scholar
6. Whatmore, R. W., Huang, Z. and Todd, M., J. Appl. Phys. 82, 5686 (1997)Google Scholar
7. Liu, D. and Chen, Haydn, Mat. Lett. 28, 17 (1996)Google Scholar
8. Bjormander, C., Sreenivas, K., Grishin, A. M. and Rao, K. V., Appl. Phys. Lett. 67, 58 (1995)Google Scholar
9. Maria, J. P., Hackenberger, W. and Trolier-Mckinstry, S., J. Appl. Phys. 84, 5147 (1998)Google Scholar