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Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy

Published online by Cambridge University Press:  10 February 2011

P. S. Lee ,
D. Mangelinck ,
K. L. Pey ,
J. Ding ,
T. Osipowicz ,
C. S. Ho ,
G. L. Chen  and
L. Chan
P. S. Lee
Affiliation:
Dept of Materials Science, National University of Singapore, Singapore 119260, email: [email protected]
D. Mangelinck
Affiliation:
Institute of Materials Research and Engineering, National University of Singapore, Singapore 119260, email: [email protected]
K. L. Pey
Affiliation:
Dept of Electrical Engineering, National University of Singapore, Singapore 119260, email: [email protected]
J. Ding
Affiliation:
Dept of Materials Science, National University of Singapore, Singapore 119260, email: [email protected]
T. Osipowicz
Affiliation:
Dept of Physics, National University of Singapore, Singapore 119260, email: [email protected]
C. S. Ho
Affiliation:
Institute of Materials Research and Engineering, National University of Singapore, Singapore 119260, email: [email protected]
G. L. Chen
Affiliation:
Data Storage Institute, National University of Singapore, Singapore 119260, email: [email protected]
L. Chan
Affiliation:
Chartered Semiconductor Manufacturing Ltd., 60 Woodlands, Industrial Park D, Street 2, Singapore 738406.
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Abstract

The formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 gtm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm−1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 269
Copyright
Copyright © Materials Research Society 2000

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References

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