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Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS

Published online by Cambridge University Press:  01 February 2011

Ronald C. Hedden ,
Barry J. Bauer  and
Hae-Jeong Lee
Ronald C. Hedden
Affiliation:
Polymers DivisionNational Institute of Standards and Technology Gaithersburg, Maryland 20899, U.S.A.
Barry J. Bauer
Affiliation:
Polymers DivisionNational Institute of Standards and Technology Gaithersburg, Maryland 20899, U.S.A.
Hae-Jeong Lee
Affiliation:
Polymers DivisionNational Institute of Standards and Technology Gaithersburg, Maryland 20899, U.S.A.
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Abstract

Small-angle neutron scattering (SANS) contrast variation is used to characterize matrix properties and pore size in nanoporous low-dielectric constant (low-k) thin films. Using a vapor adsorption technique, SANS measurements are used to identify a “contrast match” solvent mixture containing the hydrogen– and deuterium-containing versions of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. With information from specular X-ray reflectivity and ion scattering, the technique is useful for estimating the mass density of the matrix (wall) material and the pore size distribution. To illustrate the technique, a porous methylsilsesquioxane (MSQ) spin-on dielectric is characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E9.7
Copyright
Copyright © Materials Research Society 2003

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