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Characterization of Nanocavities in Silicon UsingSmall Angle X-Ray Scattering

Published online by Cambridge University Press:  01 February 2011

Myriam Dunmont
Affiliation:
[email protected], Paul Cézanne University, TECSEN-UMR 6122 CNRS , service 262, Escadrille Normandie Niemen, Marseille, 130397, France, 00 33 4 91 28 80 98
Vanessa Coulet
Affiliation:
[email protected], Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122 CNRS, Escadrille Normandie Niemen, Marseille, 13 397, France
Gabrielle Regula
Affiliation:
[email protected], Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122 CNRS, Escadrille Normandie Niemen, Marseille, 13 397, France
Françoise Bley
Affiliation:
[email protected], LTPCM-ENSEEG, BP75, St-Martin-d'Hères, 38 402, France
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Abstract

The techniques of small angle X-ray scattering and transmission electron microscopy are applied to characterize the size distribution of nanocavities in a (111) Si wafer multi-implanted with He+ in the Mev range energy. The comparison between both methods shows that they all give access to the same structural information but small angle X-ray scattering additionally offers the possibility to monitor the cavity size distribution during a thermal treatment. Moreover, providing that the collected data are of good quality, the former method also allows the knowledge of the porosity of the implanted Si wafer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

[1] Myers, S.M., Bishop, D.M., Follstaedt, D.M., Stein, H.J., Wampler, W.R., Mat. Res. Soc. Symp. 283, 549 (1993).Google Scholar
[2] Pertersen, G.A., Myers, S.M., Follstaedt, D.M., Nucl. Instr. Meth. B127/128, 301 (1997).Google Scholar
[3] Tonini, R., Corni, F., Frabboni, S., Ottaviani, G., Cerofolini, G.F., J. Appl. Phys. 84, 4802 (1998).Google Scholar
[4] Fichtner, P.F.P., Kaschny, J.R., Behkorupaar, M.,Yankov, R.A., Mucklich, A., Skorupa, W., Nucl. Instr. Meth. B148, 328 (1999).Google Scholar
[5] Simpson, T.W. and Mitchell, I. V., Appl. Phys. Lett. 86, 241907 (2005).Google Scholar
[6] Oliviero, E., David, M.L., Fedorov, A.V., Veen, A. van, Beaufort, M.F., Barbot, J.F., Mat. Sci. Eng, B102, 222 (2003).Google Scholar
[7] Griffoen, C.C., Evans, J.H., de, P.C. Jong, A. van Veen, Nucl. Instr. Meth. B27, 417 (1987).Google Scholar
[8] Evans, J.H., Veen, A. van, Griffoen, C.C., Nucl. Instr. Meth. B28, 360 (1987).Google Scholar
[9] Raineri, V., Battaglia, A., Rimini, E., Nucl. Instr. Meth. B96, 249 (1996).Google Scholar
[10] Brusa, R. S., Karwasz, G. P., Tiengo, N., Zecca, A., Corni, F., Tonini, R., Ottaviani, G., Phys. Rev. B 61 10154 (2000).Google Scholar
[11] Babonneau, D., Beaufort, M.-F., Declemy, A., Barbot, J.-F., Simon, J. P., J. Appl. Phys. 99, 113507 (2006).Google Scholar
[12] Osamura, K., Suzuki, H., J. of Nuc. Mat., 113, 192 (1983).Google Scholar
[13] Zhou, B., Liu, F., Gu, J., Zhang, Q., Zhou, Y., Zhu, M., Thin Solid Films, 501, 113 (2005).Google Scholar
[14] Leoni, E., Bouayadi, R. El, Martinelli, L., Regula, G., Ntsoenzok, E., Pichaud, B., Pizzini, S., EJAP, 27, 89 (2004).Google Scholar
[15] Simon, J.-P., Arnaud, S., Bley, F., Berar, J.-F., Caillot, B., Comparat, V., Geissler, E., Geyer, A. de, Jeantey, P., Livet, F. and H, H. Okuda, J. of Appl. Cryst. 30, 900 (1998).Google Scholar
[16] Glatter, O. and Kratky, O., Small Angle X-rays Scattering, Academic Press, London, (1982).Google Scholar
[17] Nicolas-Dumont, M., Precipitation evolution in an Al-Zn-Mg alloy during heat treatments and in the heat-affected zone of welded joints, PhD, Institut National Polytechnique de Grenoble (2002).Google Scholar
[18] Dumont, M., Regula, G., Coulet, M.-V., Bley, F., to be submitted.Google Scholar