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Characterization of Mocvd Grown Epitaxial Ceramic Oxide Thin Films

Published online by Cambridge University Press:  21 February 2011

J. C. Parker ,
H. L. M. Chang ,
J. J. Xu  and
D. J. Lam
J. C. Parker
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
H. L. M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
J. J. Xu
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
D. J. Lam
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
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Abstract

Characterization of TiO2 films grown by the MOCVD technique was carried out using micro-Raman scattering. The effects of processing parameters on the film composition and morphology were investigated. The micro-Raman technique was shown to be a useful tool for characterizing oxide thin films grown by the MOCVD technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 337
Copyright
Copyright © Materials Research Society 1990

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References

[1]Yokozawa, M., Iwasa, H., and Teramoto, I., Jpn. J. Appl. Phys. 7, 96 (1968).Google Scholar
[2]Kurtz, S.R. and Gordon, R., Thin Solid Films 147, 167 (1987).Google Scholar
[3]Takahashi, Y., Tsuda, K., Sugiyama, K., Minoura, H., Makino, D., and Tsuiki, M., J. Chem Soc., Faraday Trans I 77, 1051 (1981).Google Scholar
[4]Pawlewicz, W.T., Exarhos, G.J., and Conway, W.E., Appl. Opt. 22, 1837 (1983).Google Scholar
[5]Parker, J.C. and Seigel, R.W. (to be published in J. Mat. Res. 1990).Google Scholar
[6]Chang, H.L.M., Parker, J.C., Xu, J.J., and Lam, D.J., this proceedings.Google Scholar
[7]Capwell, R.J., Spagnolo, F., DeSessa, M.A., Appl. Spec. 26, 537 (1972).Google Scholar
[8]Ohsaka, T., Izumi, F., Fujiki, Y., J. Raman Spec. 7, 321 (1978).Google Scholar
[9]Porto, S.P.S., Fleury, P.A., Damen, T.C., Phys. Rev. 154, 522 (1967).Google Scholar
[10]DeVries, R.C. and Roy, R., Ceramic Bull. 33, 370 (1954).Google Scholar
[11]Holstein, W.L. and Fitzjohn, J.L., J. Crystal Growth 94, 145 (1989).Google Scholar