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Characterization of Metal/A1xIn1-xN Interface Thermal Stability and Electrical Properties

Published online by Cambridge University Press:  10 February 2011

Guohua Qiu ,
Fen Chen ,
J. O. Olowolafe ,
C. P. Swann ,
K. M. Unruh  and
D. S. Holmes
Guohua Qiu
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE 19716
Fen Chen
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE 19716
J. O. Olowolafe
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE 19716
C. P. Swann
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
K. M. Unruh
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
D. S. Holmes
Affiliation:
Lake Shore Cysotronics, Inc., 64 East Walnut Street, Westerville, Ohio 43081–2399
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Abstract

The interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride semiconductors are very rare. In this study, linear I-V characteristics of titanium and aluminum to A1xIn1-xN of three different composition (x=0.18, 0.50,0.85) were obtained exhibiting ohmic characteristics. Specific contact resistance of these metals to A1.18In.82N and Al.5In.5N was measured by transmission line measurement. Interdiffusion between the metals and the semiconductors, induced by annealing in N2 ambient, was determined using RBS and thermal stability was evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1073
Copyright
Copyright © Materials Research Society 1997

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References

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