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Characterization of KNbO3 Thin Films Deposited by Ion Beam Sputtering using a Computer-Controlled Rotating Target Holder

Published online by Cambridge University Press:  21 February 2011

M. S. Ameen ,
T. M. Graettinger ,
O. Auciello ,
S. H. Rou ,
A. I. Kingon  and
A. R. Krauss
M. S. Ameen
Affiliation:
North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina,27695-7907
T. M. Graettinger
Affiliation:
North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina,27695-7907
O. Auciello
Affiliation:
North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina,27695-7907
S. H. Rou
Affiliation:
North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina,27695-7907
A. I. Kingon
Affiliation:
North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina,27695-7907
A. R. Krauss
Affiliation:
Argonne National Laboratory, Chemistry Division. Argonne, Illinois, 60439.
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Abstract

KNbO3 is a strong candidate as a material for use as channel waveguides due to a high electrooptic figure of merit. High quality single crystals are difficult to obtain due to incongruent melting of the compound. Control of cation concentration and oxygen incorporation are problems encountered in current thin film processing routes.

In order to overcome the problems discussed above, an ion beam deposition system featuring a computer-controlled rotatable target holder and quartz crystal resonator (QCR) feedback loop has been developed. Multicomponent films are produced via sputtering from elemental or compound targets sequentially exposed to an ion beam. Initial results are presented on the use of this new technique for the deposition of KNbO3. Pressed KNbO3, Nb2O5, and KO2 powders were used as sputtering targets. By varying the programmed thickness of deposited film from each target being sputtered, the ratio of K:Nb could be reproducibly controlled. The variation in sticking coefficients due to substrate temperature was also compensated for in this manner.

Thin films were analyzed by X-ray diffraction and TEM to determine phases present and film microstructure. Film morphology and composition has been studied as a function of substrate temperature, layer thickness, and ion beam process parameters. The relation between deposition parameters and film characteristics are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 175
Copyright
Copyright © Materials Research Society 1989

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References

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