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Characterization of Ion Implanted GaN

Published online by Cambridge University Press:  17 March 2011

B.J. Skromme ,
G.L. Martinez ,
L. Krasnobaev  and
D.B. Poker
B.J. Skromme
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706, U.S.A
G.L. Martinez
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706, U.S.A
L. Krasnobaev
Affiliation:
Implant Sciences Corp., Wakefield, MA 01880
D.B. Poker
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or CGa) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic PN in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to PGa antisite double donors, which are stable in p-type material

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.39
Copyright
Copyright © Materials Research Society 2001

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References

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