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Characterization of Ion Implantation Damage in Capless Annealed GaAs

Published online by Cambridge University Press:  25 February 2011

H. Kanber ,
M. Feng  and
J. M. Whelan
H. Kanber
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, CA 90509;
M. Feng
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, CA 90509;
J. M. Whelan
Affiliation:
Materials Science Dept., University of Southern California, Los Angeles, CA 90089
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Abstract

Arsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 365
Copyright
Copyright © Materials Research Society 1984

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References

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