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Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs

Published online by Cambridge University Press:  28 July 2011

Dongping Wu ,
Jun Lu ,
Stefan Persson ,
Per-Erik Hellström ,
Elizaveta Vainonen-Ahlgren ,
Eva Tois ,
Marko Tuominen ,
Mikael Östling  and
Shi-Li Zhang
Dongping Wu
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista,Sweden; E-mail: [email protected]
Jun Lu
Affiliation:
Uppsala University, The Ångström Laboratory, Box 534, SE-75121 Uppsala, Sweden.
Stefan Persson
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Per-Erik Hellström
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Elizaveta Vainonen-Ahlgren
Affiliation:
ASM Microchemistry Ltd., Hämeentie 135 A FIN-00560 Helsinki, Finland.
Eva Tois
Affiliation:
ASM Microchemistry Ltd., Hämeentie 135 A FIN-00560 Helsinki, Finland.
Marko Tuominen
Affiliation:
ASM Microchemistry Ltd., Hämeentie 135 A FIN-00560 Helsinki, Finland.
Mikael Östling
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Shi-Li Zhang
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
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Abstract

In order to combine the merits of both HfO2 and Al2O3 as high-κ gate dielectrics for CMOS technology, high-κ nanolaminate structures in the form of either Al2O3/HfO2/Al2O3 or Al2O3/HfAlOx/Al2O3 were implemented in pMOSFETs and electrically and microstructurally charachterized. ALD TiN film was used as the metal gate electrodes for the pMOSFETs. After full transistor-processing including a rapid thermal processing step at 930 °C, the HfO2 film in the former nanolaminate was found to be crystallized. In contrast, the HfAlOx layer in the latter nanolaminate remained in the amorphous state. Both types of pMOSFETs exhibited a hysteresis as small as ∼20 mV in C-V characteristics in the bias range of +/− 2 V. They also showed a reduced gate leakage current. The pMOSFET with the Al2O3/HfAlOx/Al2O3 nanolaminate was characterized with a subthreshold slope of 77 mV/decade and a channel hole mobility close to the universal hole mobility curve. The pMOSFET with the Al2O3/HfO2/Al2O3, however, exhibited a subthreshold slope of 100 mV/decade and a ∼30% lower hole mobility than the universal curve.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D2.3
Copyright
Copyright © Materials Research Society 2004

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References

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