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Characterization of Dielectrics Over Broad Electrical Bandwidths

Published online by Cambridge University Press:  21 February 2011

G. Arjavalingam
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Y. Pastol
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
J.-M. Halbout
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
G. V. Kopcsay
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Extract

There is considerable recent interest in the dielectric properties of materials measured over broad electrical bandwidths. This follows from advances made in the performance of electronic devices which now produce pulses with risetimes in the order of 5 picoseconds. It is essential to know the dielectric constants and loss properties of the materials used in fabricating these devices and their interconnection structures, up to frequencies of about 100 GHz. Moreover, such information will be invaluable for the effective use of microwaves in materials processing [1]. The curing of polymers and the sintering of ceramics are two examples. Here, we discuss the recently developed coherent microwave transient spectroscopy (COMITS) technique which measures the complex dielectric constants of materials, from 10 GHz to about 125 GHz, in a single experiment [2,3].

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Microwave Processing of Materials, edited by Sutton, W.H., Brooks, M.H., and Chabinsky, I.J., (Mater. Res. Soc. Proc. 124. Pittsburgh, PA 1988).Google Scholar
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3. Arjavalingam, G., Pastol, Y., Halbout, J.-M., and Kopcsay, G.V., to be published in IEEE Trans. Microwave Theory and Tech., special issue on the application of optoelectronics for microwave devices, circuits and systems, April 1990.Google Scholar
4. Pastol, Y., Arjavalingam, G., Halbout, J.-M., and Kopcsay, G.V., “Absorption and dispersion of low-loss dielectrics measured with microwave transient radiation”, Electron. Lett., 25 523 (1989).Google Scholar
5. Pastol, Y., Arjavalingam, G., Kopcsay, G.V., and Kopcsay, G.V., Appl. Phys. Lett., 55, 2277 (1989).Google Scholar
6. Arjavalingam, G., Theophilou, N., Pastol, Y., Kopcsay, G.V., and Angelopoulos, M., unpublished.Google Scholar