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Characterization of Defects in Heavily Si-Doped GaAs by A Monoenergetic Positron Beam

Published online by Cambridge University Press:  03 September 2012

A. Uedono ,
Y. Ujihira ,
L. Wei  and
S. Tanigawa
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

Native defects in Si-doped, Zn-doped and undoped GaAs grown by horizontal Bridgman (HB) method and molecular beam epitaxiy (MBE) were studied by a monoenergetic positron beam. Positron lifetime spectra and Doppler broadening profiles were also measured by using energetic positrons. It was found that monovacancies were usually found in Si-doped HB-GaAs, however, divacancies were created in a specimen with low impurity concentration. For Zn-doped HB-GaAs, interstitial clusters were found to be major type of defects. The high concentration of monovacancies and of divacancies coexist in heavily Si-doped MBE-GaAs. These vacancy-complexes were found to act to reduce the concentration of free carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 277
Copyright
Copyright © Materials Research Society 1992

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References

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