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Characterization of Defects in GaP, GaAs and GaAsl-xPx Electroluminescent Diodes by Transmission Electron Microscope
Published online by Cambridge University Press: 26 February 2011
Abstract
Dislocations and some other lattice defects were observed in typical III-V semiconducting materials. The usefulness of electron microscopy is emphasized and some examples of characterizing the nature of lattice imperfections are presented here.
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- Copyright © Materials Research Society 1988