Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:53:35.806Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Compositional Gradients in Amorphous Semiconductor thin Films By Real Time Spectroscopic Ellipsometry

Published online by Cambridge University Press:  15 February 2011

Sangbo Kim ,
Yiwei Lu  and
R. W. Collins
Sangbo Kim
Affiliation:
Materials Research Laboratory and the Department of Physics, The Pennsylvania State University, University Park, PA 16802.
Yiwei Lu
Affiliation:
Materials Research Laboratory and the Department of Physics, The Pennsylvania State University, University Park, PA 16802.
R. W. Collins
Affiliation:
Materials Research Laboratory and the Department of Physics, The Pennsylvania State University, University Park, PA 16802.
Get access

Abstract

A new approach has been developed for the analysis of real time spectroscopie ellipsometry (RTSE) data that has important applications in characterizing compositionally-graded layers in amorphous semiconductor devices. The new RTSE data analysis approach determines (i) the instantaneous deposition rate, (ii) the surface roughness layer thickness, and (iii) the dielectric function of the near-surface layer (top 20 Å) of the growing film, all without any knowledge of the deposition history. We tested this new approach by characterizing a-Si1-xCx:H (x ∼ 0.09) alloy films with continuously graded void volume fractions. The results reported here are unique in that they represent the first successful optical analysis of amorphous semiconductor structures having continuously varying properties with depth into the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 15
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Madan, A. and Shaw, M.P., The Physics and Applications of Amorphous Semiconductors, (Academic Press, San Diego, 1988), pp. 161–180.Google Scholar
2. Lim, K.S., Konagai, M., and Takahashi, K., J. Appl. Phys. 56, 538 (1984).Google Scholar
3. Lu, Y., An, I., Gunes, M., Wakagi, M., Wronski, C. R., and Collins, R.W., Mater. Res. Soc. Symp. Proc. 297, 31 (1993).Google Scholar
4. Guha, S., Narasimhan, K.L., and Pietruszko, S.M., J. Appl. Phys. 52, 859 (1981).Google Scholar
5. Aspnes, D.E., J. Opt. Soc. Am. A, 10, 974 (1993).Google Scholar
6. Aspnes, D.E., Appl. Phys. Lett. 60, 1244 (1992).Google Scholar
7. Lu, Y., An, I., Gunes, M., Wakagi, M., Wrolski, C. R., and Collins, R.W., Appl. Phys. Lett., 63, 2228 (1993).Google Scholar
8. Kim, S. and Collins, R.W., unpublished (1995).Google Scholar