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Characterization of Chemically Prepared PZT Thin Films

Published online by Cambridge University Press:  16 February 2011

Bruce A. Tuttle ,
R.W. Schwartz ,
D.H. Doughty ,
J.A. Voigt  and
A.H. Carim
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
R.W. Schwartz
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
D.H. Doughty
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
J.A. Voigt
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
A.H. Carim
Affiliation:
University of New Mexico, Albuquerque, NM
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Abstract

We have systematically varied processing parameters to fabricate PZT 53/47 thin films. Polycrystalline PZT thin films were fabricated by spin depositing Pt coated Sio2/Si substrates with alkoxide solutions. Our study focused on two process parameters: 1) heating rate and 2) excess Pb additions. We used rapid thermal processing techniques to vary heating rates from 3°C/min to 8400°C/min. Films were characterized with the following excess Pb additions: 0, 3, 5, and 10 mol% For all process variations, films with greater perovskite content had better ferroelectric properties. Our best films were fabricated using the following process parameters: an excess Pb addition of 5 mol%, a heating rate of 8400°C/min and annealing conditions of 700°C for 1 min. Films fabricated using these process conditions had a remanent polarization of 0.27 C/m2and a coercive field of 3.4 MV/m.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 159
Copyright
Copyright © Materials Research Society 1990

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References

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