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Characterization and Optimization of Mbe Grown GaAs On Silicon On Sapphire Incorporating A Low Temperature Buffer

Published online by Cambridge University Press:  25 February 2011

Hilda Kanber ,
Verett A. Mires  and
Robert A. Metzger
Hilda Kanber
Affiliation:
Hughes Aircraft Company, Microwave Products Division, P.O. Box 2940, Torrance, CA 90509
Verett A. Mires
Affiliation:
Hughes Aircraft Company, Microwave Products Division, P.O. Box 2940, Torrance, CA 90509
Robert A. Metzger
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

GaAs grown on silicon on sapphire (SOS) offers a major advantage over GaAs on Si because of the closer match in thermal expansion coefficients. In this paper, we compare MBE grown GaAs on orientated and selectively misoriented SOS with previously optimized GaAs on Si. The comparisons are made for active layer structures suitable for microwave low noise and power FET applications. Optimization of MBE growth on SOS used comparison criteria of morphology, surface defect density, X-ray spectra, electron mobility and 10K photoluminescence spectra as indicators of residual stress. MBE growth on 6° misoriented SOS produces nearly stress free layers with the incorporation of the low temperature buffer. Electrical profiles and wafer mapping of ion implanted GaAs on SOS with low temperature buffer show excellent confinement of the FET channel layer and good electrical activation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 417
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Lee, J.W, Shichijo, H., Tsai, H.L. and Matyi, R.J., Appl. Phys. Left. 50, 31 (1987).Google Scholar
[2] Shimizu, M., Sugawara, K. and Sakurai, T., J Jpn. Ass. Cryst. Growth 13, 253 (1986).Google Scholar
[3] Fischer, R., Neuman, D., Zabel, H., Morkoc, H., Choe, C., and Otsuka, N., Appl. Phys. Lett. 48, 1223 (1986).Google Scholar
[4] Yamaguchi, M., Sugo, M. and Itoh, Y., Appl. Phys. Left. 54, 2568 (1989).Google Scholar
[5] Ziel, J. P. Van der, Chand, N., and Weiner, J.S., J. Appl. Phys. 66, 1195 (1989).Google Scholar
[6] Chand, N. and Chu, S.N.G., Appl. Phys. Lett. 58, 74 (1991).CrossRefGoogle Scholar
[7] Kanber, H., Wang, D.C., Chi, T.Y. and Delaney, M.J., 1989 IEEE GaAs IC Symposium Technical Digest, p. 151 (1989).Google Scholar
[8] Zemon, S., Shastry, S.K., P Norris, Jagarrath, C., Lambert, G., Solid State Commu. 58,457 (1986).Google Scholar
[9] Freundlich, A., Leycuras, A., Grenet, J.C., and Grattepain, C., Appl. Phys. Lett. 53, 2635 (1988).Google Scholar
[10] Kanber, H. and Wang, D.C., unpublished.Google Scholar