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Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

Published online by Cambridge University Press:  01 February 2011

Hui Chen ,
Guan Wang ,
Michael Dudley ,
Zhou Xu ,
James. H. Edgar ,
Tim Batten ,
Martin Kuball ,
Lihua Zhang  and
Yimei Zhu
Hui Chen
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, 100 Nicolls Rd, Stony Brook, NY, 11794, United States
Guan Wang
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794, United States
Zhou Xu
Affiliation:
[email protected], Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
James. H. Edgar
Affiliation:
[email protected], Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
Tim Batten
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, BS8 1TL, United Kingdom
Martin Kuball
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, BS8 1TL, United Kingdom
Lihua Zhang
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, NY, 11973, United States
Yimei Zhu
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, NY, 11973, United States
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Abstract

A systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

Keywords

BAstransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D08-03
Copyright
Copyright © Materials Research Society 2008

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References

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