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Characterization and Applicatons of Arsenic-Implanted Mocvd-Grown GaAs Structures

Published online by Cambridge University Press:  22 February 2011

Fereydoon Namavar ,
N. Kalkhoran ,
A. Cremins  and
S. Vernon
Fereydoon Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
N. Kalkhoran
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
A. Cremins
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
S. Vernon
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
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Abstract

Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 51
Copyright
Copyright © Materials Research Society 1994

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References

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