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Characteristics of Surface-Channel Strained Si1-yCyn-MOSFETS

Published online by Cambridge University Press:  10 February 2011

K. Rim ,
T. O. Mitchell ,
J. L. Hoyt ,
G. Fountain  and
J. F. Gibbons
K. Rim
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
T. O. Mitchell
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
J. L. Hoyt
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
J. F. Gibbons
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

The first demonstration of n-MOSFETs fabricated using strained Si1-yCy surface channels is reported. Tensile-strained Si1-yCy layers with substitutional carbon contents up to 0.8 atomic percent were epitaxially grown on <100> Si substrates by rapid thermal chemical vapor deposition, using silane and methylsilane as the silicon and carbon precursors. n-MOSFETS were fabricated using standard MOS processing with reduced thermal exposure to minimize the possibility of strain relaxation. A remote plasma CVD oxide was employed to form the gate oxide. The Si1-yCy devices exhibit electrical characteristics that are typical for Si n-MOSFETs, with good turn-on and subthreshold characteristics. MOS capacitance-voltage analysis demonstrates comparable oxide interface qualities for the Si1-yCy and Si control devices. No carbon-related leakage current is observed in source and drain diode junctions. Characterization of the MOSFET electron inversion layer mobility at room temperature shows comparable mobilities, within the sensitivity of the measurement, for the Si1-yCy and Si control devices. This is in contrast to the mobility enhancement observed in n-MOSFETs fabricated using tensile- strained Si grown on relaxed Si1-xGex layers. At low temperatures, the inversion layer mobility of Si1-yCy devices is lower than that of the Si controls, and appears to be affected by Coulomb and possibly random alloy scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 43
Copyright
Copyright © Materials Research Society 1998

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References

1. Eberl, K., Iyer, S.S., Zollner, S., Tsang, J.C., and LeGoues, F.K., Appl. Phys. Left. 60, 3033 (1992).Google Scholar
2. Mitchell, T.O., Hoyt, J.L., and Gibbons, J.F., Appl. Phys. Lett. 71, 1688 (1997).Google Scholar
3. Iyer, S.S., Eberl, K., Goorsky, M.S., LeGoues, F.K., Tsang, J.C., and Cardone, F., Appl. Phys. Left. 60, 356 (1992).Google Scholar
4. Faschinger, W., Zerlauth, S., Bauer, G., and Palmetshofer, L., Appl. Phys. Lett. 67, 3933 (1995).Google Scholar
5. Rim, K., Mitchell, T.O., Singh, D.V., Hoyt, J.L., and Gibbons, J.F., Appl. Phys. Lett., to be published.Google Scholar
6. Demkov, A.A. and Sankey, O.F., Phys. Rev. B 48, 2207 (1993).Google Scholar
7. Welser, J.J., PhD Thesis, Stanford University, (1995).Google Scholar
8. Welser, J.J., Hoyt, J.L., Takagi, S., and Gibbons, J.F., Proc. 1994 IEDM, p. 373– 6 (1994).Google Scholar
9. Rim, K., Welser, J. J., Hoyt, J.L., and Gibbons, J.F., Proc. 1995 IEDM, p.517–20 (1995).Google Scholar
10. Fountain, G.G., Rudder, R.A., Httangady, S.V., Markunas, R.J., Lindorme, P.S., J. Appl. Phys. 63, 4744 (1988).Google Scholar
11. Yu, Z. and Dutton, R.W., SEDAN III, Stanford University, Stanford, CA, (1985).Google Scholar
12. Takagi, S., Toriumi, A., Iwase, M., and Tango, H., IEEE Trans. Elect. Dev. 41, 2357 (1994).Google Scholar
13. Singh, J., Physics of Semiconductors and Their Heterostructures, p. 372, (McGraw-Hill, New York, 1993).Google Scholar
14. Lundstrom, M., Fundamentals of Carrier Transport, p. 49, (Addison-Wesley, 1990).Google Scholar
15. Davis, G. and Newman, R.C., in Handbook of Semiconductors Vol.3, edited by Moss, T.S. (Elsevier Science, New York, 1994).Google Scholar
16. Ershov, M. and Ryzhíi, V., J. Appl. Phys. 76, 1924 (1994).Google Scholar
17. Osten, H.J. and Gaworzewski, P., J. Appl. Phys. 82, 4977 (1997).Google Scholar