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Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates

Published online by Cambridge University Press:  01 February 2011

Dapeng Xu ,
Juno Yu-Ting Huang ,
Joo Hyung Park ,
Luke J Mawst ,
Thomas F Kuech ,
XUEYAN SONG  and
Susan E Babcock
Dapeng Xu
Affiliation:
[email protected], University of Wisconsin-Madison, Electrical and Computer Engineering, 1415 Engineering Drive, Madison, WI, 53705, United States
Juno Yu-Ting Huang
Affiliation:
[email protected], University of Wisconsin-Madison, Electrical and Computer Engineering, Madison, WI, 53706, United States
Joo Hyung Park
Affiliation:
[email protected], University of Wisconsin-Madison, Electrical and Computer Engineering, Madison, WI, 53706, United States
Luke J Mawst
Affiliation:
[email protected], University of Wisconsin-Madison, Electrical and Computer Engineering, Madison, WI, 53706, United States
Thomas F Kuech
Affiliation:
[email protected], University of Wisconsin-Madison, Chemical and Biological Engineering, Madison, WI, 53706, United States
XUEYAN SONG
Affiliation:
[email protected], University of Wisconsin-Madison, Materials Science and Engineering, Madison, WI, 53706, United States
Susan E Babcock
Affiliation:
[email protected], University of Wisconsin-Madison, Materials Science and Engineering, Madison, WI, 53706, United States
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Abstract

GaAsSb (N) superattices (SLs) grown on InP substrates using metalorganic vapor phase epitaxy are investigated by high resolution X-ray diffraction (XRD), low temperature photoluminescence (PL), and high resolution transmission electron microscopy (TEM). XRD shows very sharp satellite peaks and pendellosung fringes, which indicates excellent crystalline quality and abrupt interfaces in the GaAsSb (N)/InP SL, with Sb varies with 0.2 to 0.7.Low temperature PL shows clearly different features between the 25% Sb and 44% Sb samples.A band alignment difference is proposed to explain these behaviors. Experimental data establishes that the transition from a type-I to a type-II heterostructure occurs for a Sb-content of approximately 40%, which agrees well with the prediction by Model Solid Theory. While N incorporation degrades the PL intensity, it also provides the greater electron confinement needed to achieve mid-IR emission from GaAsSbN/GaAsSb type-II QWs

Keywords

metalorganic depositionIII-Vx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-01
Copyright
Copyright © Materials Research Society 2007

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