Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:39:54.581Z Has data issue: false hasContentIssue false
  • English
  • Français

The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150°C

Published online by Cambridge University Press:  15 February 2011

Su-hyuk Kang ,
Min-Cheol Lee ,
Kook-Chul Moon  and
Min-koo Han
Su-hyuk Kang
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Min-Cheol Lee
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Kook-Chul Moon
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Min-koo Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Get access

Abstract

An ultra-low temperature processed silicon dioxide film has been fabricated by inductively coupled plasma chemical vapor deposition at 150°C using He/N2O/SiH4 mixture. The deposited silicon dioxide film exhibits a high breakdown field larger than 6MV/cm in case of high ICP plasma condition while the flat band voltage of the oxide film significantly shifted in the negative direction with increasing ICP power. In order to obtain both high electrical breakdown filed and the low flat-band voltage, excimer laser irradiation with the energy density of 430mJ/cm2 is employed. The oxide film irradiated by excimer laser exhibited considerably shifted in the positive direction without scarifying the breakdown characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H6.18
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gosain, D. P., Noguchi, T., Usui, S., Japanese Journal of Applied Physics. Part 2. 39 (3AB), L179–81 (2000)Google Scholar
[2] Young, N. D., French, I. D., Trainor, M. J., Murley, D. T., McCulloch, D. J. and Wilks, R. W., IDW' 99 219–222 (1999)Google Scholar
[3] Chung, Wonsuk and Thomson, Michael O., Materials Research Society Symposium Proceedings, Vol. 685E, D12.4.1–D12.4.6 (2001)Google Scholar
[4] Ashida, S., Shim, M. R., Lieberman, M. A., J. Vac. Sci. Technol. A14 (2) 391 (1996)Google Scholar
[5] Sze, S. M., Physics of Semiconductor Devices, 2nd Edition, John Wiley & Sons, 376 Google Scholar
[6] Nicollian, E. H., Brews, J. R., MOS Physics and Technology, John Wiley & Sons, 778–779 Google Scholar
[7] Im, James S., Kim, H. J., and Thomson, Michael O., Applied Physics Letters, 63 (14), 1969–1971 (1993)Google Scholar