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Characteristics of Si-Implanted (211) Versus (100) GaAs

Published online by Cambridge University Press:  25 February 2011

J. Epp ,
J. G. Dillard ,
A. Siochi ,
R. Zallen ,
E. D. Cole ,
S. Sen ,
A. Vaseashta  and
L. C. Burton
J. Epp
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
J. G. Dillard
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
A. Siochi
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
R. Zallen
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
E. D. Cole
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
S. Sen
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
A. Vaseashta
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
L. C. Burton
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
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Abstract

Transport, Raman and XPS measurements were made on SI-implanted (1.7×1013cm−2, 50keV) and rapid-thermal annealed (100) and (211) GaAs substrates In an effort to distinguish differences between the two orientations. With these techniques, no significant differences were found. The implant-damage depth was about 1200Å for both orientations, with slightly higher near-surface damage (and lower mobility) apparent for (211). No unusual features in the (211) carrier concentration profile, as was previously reported, were evident.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 677
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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