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Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing

Published online by Cambridge University Press:  15 February 2011

J.R. Davis ,
R.A. Mcmahon  and
H. Ahmed
J.R. Davis
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
R.A. Mcmahon
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
H. Ahmed
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
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Abstract

This paper describes the production of large areas of precisely oriented, defect-free, single crystal silicon films on SiO2 by dual electron beam heating of deposited polysilicon using lateral epitaxy. Defects which occur in the film far from the seeding window are characterised, and the dependence of the area of the defect-free region on the processing conditions is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 563
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1.Leamy, H.J. in Laser and Electron Beam Interactions with Solids, Appleton, B.R. and Celler, G.K. eds. (Elsevier North Holland, New York, 1982), 459.Google Scholar
2.Lam, H.W., Pinizzotto, R.F. and Tasch, A.F., J. Electrochem Soc. 128, 1981 (1981).Google Scholar
3.McMahon, R.A., Davis, J.R. and Ahmed, H. in Laser and Electron Beam Interactions with Solids, Appleton, B.R. and Celler, G.K. eds (Elsevier North Holland, New York, 1982) 783.Google Scholar
4.Davis, J.R., McMahon, R.A. and Ahmed, H., Electronics Lett., 18, 163 (1982).Google Scholar
5.Tsaur, B-Y, Fan, J.C., Geis, M.W., Silversmith, D.J. and Mountain, R.W., Appl. Phys. Lett. 39, 561 (1981).Google Scholar
6.Schiller, S., Panzer, S. and Klabes, R., Thin Solid Films, 73, 221 (1980).Google Scholar