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Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

Published online by Cambridge University Press:  25 February 2011

J.B. Cross ,
M.A. Hoffbauer ,
J.D. Farr ,
O.J. Glembocki  and
V.M. Bermudez
J.B. Cross
Affiliation:
Los Alamos National Laboratory, Chemical and Laser Sciences Division, MS G738 Los Alamos, NM 87545
M.A. Hoffbauer
Affiliation:
Los Alamos National Laboratory, Chemical and Laser Sciences Division, MS G738 Los Alamos, NM 87545
J.D. Farr
Affiliation:
Los Alamos National Laboratory, Chemical and Laser Sciences Division, MS G738 Los Alamos, NM 87545
O.J. Glembocki
Affiliation:
Naval Research Laboratory, Surface and Interface Sciences Branch, Code 6860 Washington, DC 20375-5000
V.M. Bermudez
Affiliation:
Naval Research Laboratory, Surface and Interface Sciences Branch, Code 6860 Washington, DC 20375-5000
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Abstract

Oxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 59
Copyright
Copyright © Materials Research Society 1991

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References

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