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Characteristics of Laser Implantation Doping

Published online by Cambridge University Press:  15 February 2011

K G Ibbs  and
M L Lloyd
K G Ibbs
Affiliation:
The General Electric Company, p.l.c., Hirst Research Centre, Wembley, England, HA9 7PP
M L Lloyd
Affiliation:
The General Electric Company, p.l.c., Hirst Research Centre, Wembley, England, HA9 7PP
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Abstract

UV laser photochemical dissociation and laser enchanced thermal dissociation have been used to generate free metal dopant species from a variety of organometallic molecules near a semiconductor substrate surface. Simultaneous laser annealing via a localised melt phase allows diffusion driven implantation of the metal atoms and subsequent electrical activation in the regrowing material. High levels of dopant concentration and activation are readily achieved in this way.

Results will be presented on doping of silicon by boron using an ArF laser. These will include data on junction depths, number density and carrier density as a function of depth and interpretation of the data in terms of calculated temperature profiles.

The possibility of tailoring junction characteristics by control of laser and gas flow parameters will be considered with preliminary experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 243
Copyright
Copyright © Materials Research Society 1983

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References

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