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The characteristics of joints with Indium-silver alloy using diffusion soldering method

Published online by Cambridge University Press:  15 March 2011

Je Yoon Kim ,
Sang Won Park ,
Jee Young Yoon ,
Hwa Young Kim ,
Dae Yeon Lee ,
Gyu Tae Kim ,
Man Young Sung  and
Ey Goo Kang
Je Yoon Kim
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea
Sang Won Park
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea
Jee Young Yoon
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea
Hwa Young Kim
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea
Dae Yeon Lee
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea
Gyu Tae Kim
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea
Man Young Sung
Affiliation:
Dep. of Electrical Engineering, Korea Univ, Anam-dong, Sungbuk-ku, Seoul, Korea Email : [email protected]
Ey Goo Kang
Affiliation:
Dep. of Electronic Engineering, Far East Univ, Gamgok-Myun, Chung-buk, Korea
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Abstract

Bonding process using indium-silver alloy which can withstand high temperature was investigated at relatively low temperature. We used a thermal evaporator and vacuum coater for making indium-silver contact. From the result of experiment, we observed that indium and silver films which have good quality are formed. From phase diagram of In-Ag alloy, we can find that melting point of these compounds increases with the silver content, i.e. eutectic (144° C) <AgIn2 (166° C) < (300° C) < (670° C) < (695° C). And these compounds are determined by the composition ratio of the source metal. Now we confirmed the thermal characteristics of Indium-Silver alloy is controlled by silver. Consequently we have developed Ag/In/Ag multi-layer composite which has higher melting point than that of normal contact. The melting point of Ag/In/Ag multi-layer is about 700° C. The joint cross-sections are studied using SEM(scanning electron microscopy) and EDX(Energy Dispersive X-rays). From these data, we observed that the composition and microstructure of Ag/In/Ag multi-layer were reliable and this bonding procedure is a better technique compared to the conventional structure of quantum well LED and GaN/Si LED structure was made by using sapphire for substrate and might be good for high temperature electronic devices in the future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 817: Symposium L – New Materials for Microphotonics , 2004 , L6.36
Copyright
Copyright © Materials Research Society 2004

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