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Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes

Published online by Cambridge University Press:  10 February 2011

Shuji Nakamura
Shuji Nakamura*
Affiliation:
Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan, [email protected]
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Abstract

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under CW operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2 × 1020/cm3, respectively. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 µm and 0.8 µm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1135
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., and Mukai, T., Jpn. J. Appl. Phys. Lett. 34, L1332 (1995).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L217 (1996).Google Scholar
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Appl. Phys. Lett. 68, 2105 (1996).Google Scholar
5. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Appl. Phys. Lett. 68, 3269 (1996).Google Scholar
6. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 1477 (1996).Google Scholar
7. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 1568 (1996).Google Scholar
8. Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M., and Amano, H., Electron. Lett. 32, 1105 (1996).Google Scholar
9. Itaya, K., Onomura, M., Nishino, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fujimoto, H., Kokubun, Y., Ohba, Y., Hatakoshi, G., and Ishikawa, M., Jpn. J. Appl. Phys. 35, L1315 (1996).Google Scholar
10. Morkocç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
11. Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
12. Nakamura, S. and Mukai, T., Jpn. J. Appl. Phys. 31, L1457 (1992).Google Scholar
13. Khan, M. A., Kuznia, J. N., Olson, D. T., Blasingame, M., and Bhattarai, A. R., Appl. Phys. Lett. 63, 2455 (1993).Google Scholar
14. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., presented at 38th Electronic Material Conference, W-10, June 26-28, Santa Barbara, (1996).Google Scholar
15. Nakamura, S., Jpn. J. Appl. Phys. 30, 1620 (1991).Google Scholar