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Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient
Published online by Cambridge University Press: 15 February 2011
Abstract
The resultant physical and electrical characteristics of dielectric layers grown or annealed in nitric oxide are presented. The layers formed or modified in nitric oxide are thinner but generally superior in quality to those grown in nitrous or dry oxide. The indications are that dielectrics formed or annealed in nitric oxide are a viable alternative to other techniques of producing ultra thin (≤ 5nm) dielectrics.
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- Copyright © Materials Research Society 1995
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