Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T17:54:47.509Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient

Published online by Cambridge University Press:  15 February 2011

H. B. Harrison ,
Z. -Q Yao ,
S. Dimitrijev ,
D. Sweatman  and
Y. -T. Yeow
H. B. Harrison
Affiliation:
Griffith University, Brisbane, Australia 4111
Z. -Q Yao
Affiliation:
AWA Microelectronics, Homebush, Australia 2140
S. Dimitrijev
Affiliation:
Griffith University, Brisbane, Australia 4111
D. Sweatman
Affiliation:
Griffith University, Brisbane, Australia 4111
Y. -T. Yeow
Affiliation:
The University of Queensland, St Lucia, Australia 4072
Get access

Abstract

The resultant physical and electrical characteristics of dielectric layers grown or annealed in nitric oxide are presented. The layers formed or modified in nitric oxide are thinner but generally superior in quality to those grown in nitrous or dry oxide. The indications are that dielectrics formed or annealed in nitric oxide are a viable alternative to other techniques of producing ultra thin (≤ 5nm) dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 233
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sah, C.T., Solid-State Electronics, Vol.33, p. 147, 1990.Google Scholar
2. Morkari, Y, Baba, T. and Kaiwamura, N., IEEE Trans. Electron Dev., Vol. ED–32, p 2485, 1985.Google Scholar
3. Ito, T., Arakwa, M., Nizaki, T. and Ishikawa, M., J. Electrochem. Soc., Vol.127, p 2248, 1980.Google Scholar
4. Ito, T., Nakamura, T. and Ishikawa, H., IEEE Trans. Electron Dev., Vol. ED–29, p 498, 1982.Google Scholar
5. Fukuda, H., Arakawa, T. and Ohno, S., Electron Lett., Vol.26, p 1505, 1990.Google Scholar
6. Yao, Z.-Q, Harrison, H.B., Dimitrijev, S., Yeow, Y.T. and Sweatman, D., Appl. Phys. Lett., Vol.64, p. 3584, 1994.Google Scholar
7. Ting, W., Hwang, H, Lee, J. and Kwong, K.L., J. Appl Phys. Vol.70, p. 1972, 1991.Google Scholar
8. Tobin, P.J., Okada, Y., Ajuria, S.A., Lakhotia, V., Feil, W.A. and Hedge, R.I., J. Appl. Phys, Vol.75, p 1811, 1994.Google Scholar