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Characteristics of Cr-Al-N-O Thin Films Prepared by Pulsed Laser Deposition
Published online by Cambridge University Press: 17 March 2011
Abstract
Chromium aluminum oxynitride (Cr-Al-N-O) thin films have been successfully prepared by pulsed laser deposition (PLD). Experiments were carried out by changing surface area ratio of the targets (SR = SAlN / (S +SAlN)) from 0 to 100 %. The composition of the thin film prepared at SR = 75 % was determined to be Cr0.11Al0.39N0.25O0.25 by Rutherford backscattering spectroscopy (RBS). The hardness of the Cr-Al-N-O thin film was found to be above HV 4000 when the aluminum content in cations (x) was 25 at. %. The high hardness can be explained by solid solution hardening and/or increasing bulk modulus. The oxidation of the Cr-Al-N-O thin film occurred above 900°C. From the result of grazing angle X-ray diffractometry (GXRD), the oxidation resistance of the Cr-Al-N-O thin film was found to be improved due to the fact that Cr2O3 and -Al2O3 grains are formed at the outermost surface of the thin film.
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- Copyright © Materials Research Society 2002