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Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

Published online by Cambridge University Press:  10 February 2011

Shabih Fatima ,
Jennifer Wong-Leung ,
John Fitz Gerald  and
C. Jagadish
Shabih Fatima
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200 Australia
Jennifer Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200 Australia
John Fitz Gerald
Affiliation:
Petrophysics Group, Research School of Earth Sciences, The Australian National University Canberra, ACT 0200 Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200 Australia
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Abstract

Subthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 411
Copyright
Copyright © Materials Research Society 1998

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References

1. Stolk, P.A., Gossmann, H. J., Eaglesham, D. J., Jacobson, D.C., Poate, J. M., and Luftman, H. S., Appl. Phys. Lett. 66, 568 (1995).Google Scholar
2. Gossmann, H. J., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Boone, T., and Poate, J. M., Appl. Phys. Lett. 63, 639 (1993).Google Scholar
3. Cowern, N. E. B., Janssen, K. T. F., and Jos, H. F. F., J. Appl. Phys. 68, 6191 (1990).Google Scholar
4. Tamura, M., Natsuaki, N., Wada, Y., and Mitani, E.. Nucl. Instrum. Methods Phys. Res. B 21. 438 (1987).Google Scholar
5. Jones, K. S., Prussin, S., and Weber, E. R., Appl. Phys. A 45, 1 (1988).Google Scholar
6. Lalita, J., Ph.D thesis, Royal Institute of Technology, Sweden (1997).Google Scholar
7. Hay, H. J., Fastrim is a modified version of TRIM85-90 which takes into account the multilayer target (interfaces) problems inherent with TRIM (unpublished).Google Scholar
8. Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, edited by Ziegler, J. F. (Pergamon, New York, 1985).Google Scholar
9. Ferreira Lima, C. A. and Howie, A., Philos. Mag. 34, 1057 (1976).Google Scholar
10. Benton, J. L., Libertino, S., Kringh∼j, P., Eaglesham, D. J., and Poate, J. M., J. Appl. Phys. 82, 1, (1997).Google Scholar
11. Fatima, S., Wong-Leung, J., Fitz Gerald, J. and Jagadish, C., Appl. Phys. Letters (submitted).Google Scholar
12. Schreutelkamp, R. J., Custer, J. S., Liefting, J. R., Lu, W. X., and Saris, F. W., Mater. Sci. 12. Rep. 6, 275 (1991).Google Scholar
13. Giles, M. D., J. Electrochem. Soc. 138, 1160 (1991).Google Scholar
14. Eaglesham, D. J., Stolk, P. A., Gossman, H. -J., Haynes, T. E., Poate, J. M.. Nucl. Instrum. Methods B 106, 191 (1995).Google Scholar
15. Caturla, M. J., Diaz de la Rubia, T. and Gilmer, George H., NIMB 106, 1 (1995).Google Scholar