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Characterisation of the Oxidation Kinetics of Thin, Low Temperature, Electroless Plated Copper Films

Published online by Cambridge University Press:  15 February 2011

J. T. Beechinor ,
M. O'Reilly ,
J. C. Patterson ,
S. Lynch ,
E. Lafferty ,
P. V. Kelly  and
G. M. Crean
J. T. Beechinor
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
M. O'Reilly
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
J. C. Patterson
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
S. Lynch
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
E. Lafferty
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
P. V. Kelly
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
G. M. Crean
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland.
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Abstract

The morphology, chemical state and oxidation behaviour of electroless copper films deposited from two different baths were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and spectroscopic ellipsometry (SE). The electroless solutions used were a commercial electroless formaldehyde (HCHO)-based solution (Cupro-Thick 84, Alfachimici) and an electroless solution developed within the NMRC which was based on dimethylamine borane (DMAB). Both methods produced as-deposited copper films with different morphologies. SE analysis of the as-deposited films and those oxidised in a dry synthetic air environment between 75°C–150°C indicated that the freshly deposited films had inherent oxide layers of between 45Å–92Å and that significant growth of these only occurred at temperatures above 100°C within 180 minutes isothermal oxidation periods. XRD analysis confirmed that the oxidation products formed were a mixture of cuprous oxide (Cu2O) and cupric oxide (CuO). Multiple linear regression analysis of the rates of change in oxide layer thicknesses as a function of both time and temperature indicated that mixed rate laws dominated. The application of an oxidation inhibitor was shown to prevent oxidation of the asdeposited commercial copper films when heat treated at 125°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 353
Copyright
Copyright © Materials Research Society 1996

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