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Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen
Published online by Cambridge University Press: 25 February 2011
Abstract
SOI structures have been formed in (100) silicon by implanting 400 keV molecular oxygen to a dose of l.8×l018 O atoms cm−2. These samples were annealed at 1150°C for 2 hours with a SILOX cap. Oxygen depth profiles have been determined by SIMS and wafers implanted at about 500°C have been characterized by studying the regrowth kinetics, As drive in and oxidation rate in the top silicon overlay.
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